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Si3529DV
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
R DS(on) ( Ω )
I D (A) a Q g (Typ.)
? Halogen-free According to IEC 61249-2-21
Definition
N-Channel
P-Channel
40
- 40
0.125 at V GS = 10 V
0.165 at V GS = 4.5 V
0.215 at V GS = - 10 V
0.335 at V GS = - 4.5 V
2.250
1.95
- 1.76
- 1.4
2.2
2.3
? TrenchFET ? Power MOSFETs
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Stepper Motor
TSOP-6
Top V iew
? Motor Drives
D 1
S 2
G 1
1
6
D 1
3 mm
S 2
2
5
S 1
G 2
G 1
G 2
3
2.85 mm
4
D 2
S 1
D 2
Ordering Information: Si3529DV-T1-E3 (Lead (Pb)-free)
Si3529DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
V DS
V GS
40
± 20
- 40
V
T C = 25 °C
2.5
- 1.95
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
T A = 70 °C
I D
2.0
2.25 b, c
1.8 b, c
- 1.56
- 1.76 b, c
- 1.4 b, c
Pulsed Drain Current (10 μs Pulse Width)
I DM
10
-6
A
Source-Drain Current Diode Current
Pulsed Source-Drain Current
T C = 25 °C
T A = 25 °C
I S
I SM
1.26
1.05 b, c
10
- 1.26
- 1.05 b, c
-6
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I AS
E AS
5
1.25
5
1.25
mJ
T C = 25 °C
1.4
1.4
1.15
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
0.9
b, c
0.9
1.15 c
W
T A = 70 °C
0.7 b, c
0.78 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ.
Max.
Typ.
Max.
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 sec
Steady State
R thJA
R thJF
93
75
110
90
93
75
110
90
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 s.
d. Maximum under Steady State conditions is 150 °C/W (N-Channel) and 150 °C/W (P-Channel).
Document Number: 73455
S09-2277-Rev. C, 02-Nov-09
www.vishay.com
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